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NT5CB256M16ER-FL

Updated: 2026-08-03

Overview

The NT5CB256M16ER-FL is a DDR3 SDRAM memory chip manufactured by Nanya Technology. It offers 256Mx16 organization (4Gb density) with a 16-bit data bus, making it suitable for various computing applications. This component operates at standard DDR3 voltage levels and supports clock speeds that align with JEDEC specifications for DDR3 memory. As an industry-standard memory solution, it provides reliable performance for OEM system integrators and embedded designers. The chip's compatibility with common memory controllers allows for easy integration into existing designs, reducing development time for new electronic systems.

Structure and Working Principle

NT5CB256M16ER-FL 存储芯片 NANYA南亚 封装BGA96深圳市永芯易科技有限公司

The NT5CB256M16ER-FL follows standard DDR3 architecture with eight internal banks that enable concurrent memory operations. It utilizes double data rate technology to transfer data on both the rising and falling edges of the clock signal, effectively doubling the data throughput compared to single rate memories. The memory array is organized in a hierarchical structure with row and column decoders, sense amplifiers, and input/output buffers. Refresh operations are managed automatically to maintain data integrity in the dynamic memory cells. The chip includes on-die termination (ODT) to improve signal integrity in high-speed operation.

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Key Features

This DDR3 SDRAM offers several important features including programmable CAS latency (3-11 cycles), burst lengths of 8 for sequential access, and auto refresh/self refresh modes for power management. It supports write leveling to compensate for clock skew in high-speed systems. The component operates at 1.5V ±0.075V (VDD) and 1.5V ±0.1V (VDDQ) with a maximum operating current of approximately 450mA. It provides data transfer rates up to 1866Mbps/pin (DDR3-1866) depending on speed grade, making it suitable for bandwidth-intensive applications.

Application Areas

Primary applications include industrial PCs, networking equipment, embedded systems, and consumer electronics where reliable memory performance is required. The chip is commonly found in routers, switches, set-top boxes, and various control systems. In industrial applications, its extended temperature range versions (when available) make it suitable for harsh environments. The balance of performance and power efficiency also makes it appropriate for mobile computing devices where battery life is a consideration.

Maintenance and Precautions

NT5CB256M16ER-FL 电子元器件 Nanya Technology/南亚 批号25+深圳市德洲众泰科技有限公司

Proper handling procedures are essential for DDR3 SDRAM components. ESD precautions must be observed during installation and handling to prevent damage to the sensitive semiconductor devices. Storage should be in dry, controlled environments with appropriate ESD protection. Thermal management should be considered in system design, as excessive heat can affect performance and reliability. While the chip has built-in error detection capabilities, system-level error correction (ECC) may be required for mission-critical applications.

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B2B Procurement Guide

When procuring NT5CB256M16ER-FL chips, buyers should verify the exact speed grade and temperature range required for their application. Lead times can vary significantly based on market conditions, so advance planning is recommended. For volume purchases, consider working directly with authorized distributors or the manufacturer to ensure genuine components. Sample requests are typically available for design verification. Buyers should confirm packaging options (tray, tape and reel) based on their production requirements.

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