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IRFR3910TRPBF

Updated: 2026-08-30

Overview

The IRFR3910TRPBF is an N-channel power MOSFET transistor developed by Infineon Technologies, optimized for high-efficiency switching applications. It is part of the HEXFET® series, known for reliability and performance in demanding environments. The device is housed in a TO-252 (DPAK) package, suitable for surface-mount assembly. With a drain-source voltage (VDS) rating of 100V and continuous drain current (ID) of 14A, it is widely used in power electronics. Its low gate charge and fast switching characteristics make it ideal for high-frequency applications, reducing power losses and improving system efficiency.

Structure and Working Principle

英飞凌 IRFR3910TRPBF Infineon TO-252-2 100V 16A 场效应管 MOSFET 25+深圳市欣向阳科技有限公司

The IRFR3910TRPBF operates as a voltage-controlled switch, where a small gate voltage controls the flow of current between the drain and source terminals. Its structure includes a silicon die with a trench gate design, minimizing on-resistance (RDS(on)) to as low as 85mΩ. This design enhances conductivity and reduces heat generation. The MOSFET's body diode provides reverse polarity protection, a critical feature in inductive load applications like motor drives. Proper gate driving is essential to avoid shoot-through currents and ensure fast turn-on/off transitions, which are crucial for PWM-based systems.

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Key Features

The IRFR3910TRPBF offers several advantages, including low on-resistance (85mΩ typical at 10V VGS), which minimizes conduction losses. Its fast switching speed reduces switching losses, improving overall efficiency in high-frequency circuits. The device also has a high avalanche energy rating, enhancing durability in transient conditions. Thermal performance is robust due to the DPAK package's exposed pad, which facilitates heat dissipation when mounted on a PCB with adequate copper area. These features make it suitable for automotive and industrial applications where reliability under thermal stress is critical.

Application Areas

This MOSFET is commonly used in power supply units (PSUs) for servers and telecom equipment, where efficiency and compact design are priorities. It is also employed in DC-DC converters, battery management systems, and motor control circuits for drones or electric vehicles. In automotive electronics, the IRFR3910TRPBF is found in LED drivers, HVAC systems, and onboard chargers. Its ability to handle high currents and voltages makes it versatile for both low-voltage (12V/24V) and high-voltage (48V+) applications.

Maintenance and Precautions

IRFR3910TRPBF 场效应管 INFINEON(英飞凌) 封装TO-252-3 批次2021+深圳市创芯联盈电子有限公司

To ensure longevity, avoid exceeding the maximum ratings for voltage (100V), current (14A), and junction temperature (175°C). Proper heat sinking is essential, especially in high-current applications—use thermal pads or heatsinks as needed. Static electricity (ESD) can damage the gate oxide; handle with anti-static precautions. In circuits with inductive loads, incorporate flyback diodes to protect against voltage spikes. Regularly inspect solder joints and PCB traces for thermal stress, as repeated heating/cooling cycles may cause fatigue.

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B2B Procurement Guide

When sourcing the IRFR3910TRPBF, prioritize authorized distributors like Digi-Key or Mouser to avoid counterfeit parts. Bulk orders (1,000+ units) typically reduce costs by 20-30%. Verify lot codes and datasheet revisions, as specifications may evolve. For custom requirements, consult Infineon’s technical support for alternative part numbers or packaging options. Lead times vary; plan procurement 8-12 weeks ahead for large volumes. Consider second-source alternatives like IRFR3910PbF for supply chain resilience.

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